发明名称 Manufacturing method of semiconductor device
摘要 A coating solution of SOG is applied on a silicon oxynitride film (11) and precured. As a result, moisture contained in the coating solution volatilizes, and an SOG film (12) is formed. Next, a coating solution of SOG is applied on the SOG film (12) and precured. As a result, an SOG film (13) is formed. Thereafter, a coating solution of SOG is applied on the SOG film (13) and precured. As a result, an SOG film (14) is formed. Subsequently, a main cure of the SOG films (12, 13, and 14) is performed. The viscosity of the coating solution of SOG used for forming the SOG film (12) is lower than those of the coating solutions of SOG used for forming the SOG films (13 and 14).
申请公布号 US8629055(B2) 申请公布日期 2014.01.14
申请号 US20090565333 申请日期 2009.09.23
申请人 SATO TSUKASA;NAGAI KOUICHI;FUJITSU SEMICONDUCTOR LIMITED 发明人 SATO TSUKASA;NAGAI KOUICHI
分类号 H01L21/316 主分类号 H01L21/316
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