| 摘要 |
A semiconductor device (100A) according to the present invention includes: an oxide semiconductor layer (4) having a first contact region (4a) and a second contact region (4b) and a channel region (4c) located between the first contact region (4a) and the second contact region (4b); a source electrode (5) formed on the oxide semiconductor layer (4) so as to be in contact with the first contact region (4a); and a drain electrode (6) formed on the oxide semiconductor layer (4) so as to be in contact with the second contact region (4b). All side faces of the oxide semiconductor layer (4) are located over the gate electrode (2); a width of the source electrode (5) is greater than a width of the oxide semiconductor layer (4); and a width of the drain electrode (6) is greater than a width of the oxide semiconductor layer (4). |
