发明名称 |
TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING |
摘要 |
Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process. |
申请公布号 |
US2014004626(A1) |
申请公布日期 |
2014.01.02 |
申请号 |
US201213539344 |
申请日期 |
2012.06.30 |
申请人 |
XU KUN;ZHANG JIMIN;MAI DAVID H.;JEW STEPHEN;SHEN SHIH-HAUR WALTERS;WANG ZHIHONG;OSTERHELD THOMAS H.;TU WEN-CHIANG;LAM GARY KA HO;KITAJIMA TOMOHIKO;APPLIED MATERIALS, INC. |
发明人 |
XU KUN;ZHANG JIMIN;MAI DAVID H.;JEW STEPHEN;SHEN SHIH-HAUR WALTERS;WANG ZHIHONG;OSTERHELD THOMAS H.;TU WEN-CHIANG;LAM GARY KA HO;KITAJIMA TOMOHIKO |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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