发明名称 |
Semiconductor laser device that has the effect of phonon-assisted light amplification and method for manufacturing the same |
摘要 |
A semiconductor laser device that has the effect of phonon-assisted light amplification and a method for manufacturing the same are proposed. A conductive layer is formed on a semiconductor silicon substrate. A current flow is used to accomplish electro-luminescence of silicon. A silicon dioxide nanometer particle layer is sandwiched between the conductive layer and the semiconductor silicon substrate to form a MOS junction for carrier confinement. The phonon-assisted light emission mechanism can thus be strengthened to enhance the electro-luminescence efficiency of silicon so as to accomplish the lasing effect.
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申请公布号 |
US2007096171(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050261484 |
申请日期 |
2005.10.31 |
申请人 |
LIN CHING-FUH;HUANG CHU-TING;HSU SHU-CHIA;LIN KUNG-AN;LIANG EIH-ZHE |
发明人 |
LIN CHING-FUH;HUANG CHU-TING;HSU SHU-CHIA;LIN KUNG-AN;LIANG EIH-ZHE |
分类号 |
H01S5/00;H01L21/8234;H01L29/76 |
主分类号 |
H01S5/00 |
代理机构 |
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