发明名称 Semiconductor device layer structure and method of fabrication
摘要 An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
申请公布号 US8618621(B2) 申请公布日期 2013.12.31
申请号 US20100938568 申请日期 2010.11.03
申请人 OPPERMANN KLAUS-GUENTER;FRANOSCH MARTIN;HANDTMANN MARTIN;INFINEON TECHNOLOGIES AG 发明人 OPPERMANN KLAUS-GUENTER;FRANOSCH MARTIN;HANDTMANN MARTIN
分类号 H01L29/84 主分类号 H01L29/84
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