| 摘要 |
<p>The invention relates to a process for making nanometric elements. According to the invention, the process consists in photoresist-coating some ungreased borosilicate plates by centrifugation at 1500 rpm, drying the photoressist-coated plate in an IR radiation oven at 80°C, timed exposure of the mask-covered plate to UV radiation, developing the photoresist in a 0.7% KOH solution, drying by centrifugation at 2000 rpm, drying the photoresist-coated mask in an UV radiation oven, at 120°C, etching under vapour of ammonium fluoride and hydrofluoric acid in a ratio of 1:7, followed by washing, drying and removing the photoresist mask in a solution of 10% KOH, and washing and drying again, there finally resulting a nanometric element free of impurities.</p> |
