发明名称 |
Masking-Less Fuse Formation with Oxide Remaining |
摘要 |
The present disclosure relates to a method of fabricating a semiconductor device. A semiconductor device includes a bond pad and a fuse layer. The bond pad includes a coating on an upper surface. A dielectric layer is formed over the bond pad and the fuse layer. A passivation layer is formed over the dielectric layer. An etch is performed to form a bond pad opening and a fuse opening. The etch is performed using only a single mask. The fuse opening defines a fuse window. The upper surface of the bond pad is exposed by substantially removing the coating from the entire upper surface. |
申请公布号 |
US2013341757(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213531743 |
申请日期 |
2012.06.25 |
申请人 |
YANG TAI-I;YANG MARCUS;LIN CHIH-HAO;SHUE HONG-SENG;JANG RUEI-HUNG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YANG TAI-I;YANG MARCUS;LIN CHIH-HAO;SHUE HONG-SENG;JANG RUEI-HUNG |
分类号 |
H01L21/768;H01L23/525 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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