| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal processing apparatus and a thermal processing method, capable of performing both of activation of implanted impurities and restoration of introduced defects while suppressing damages to be given to a substrate. SOLUTION: A capacitor 93, a variable coil 94, a flash lamp FL and a switching element 96 such as an IGBT are connected in series. A control section 3 outputs a pulse in which an on/off period is ≥10 microseconds and ≤500 microseconds, and on time and off time have a fixed ratio within a range of 1:10 to 10:1 to a gate of the switching element 96, controls its on/off operations, and controls energization to the flash lamp FL so that time until light emission output reaches the maximum value after the flash lamp FL starts light emission becomes 10-100 milliseconds, and the total light emission time of the flash lamp FL becomes 20-1000 milliseconds. COPYRIGHT: (C)2010,JPO&INPIT |
