| 摘要 |
The present invention relates to a nanostructured titania semiconductor material, termed TSG-IMP and its production process via the sol-gel method. The TSG-IMP semiconductor material basically consists of titanium oxide, with the special feature of being like nanostructures, which gives special physicochemical properties, with ability to disperse and stabilize metal particles with high activity and selectivity in catalytic processes mainly. The process of obtaining the semiconductor material TSG-IMP comprises adding to a system with constant stirring reflux, a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, controlling the pH from 1 to 5; subjecting the acidic solution to agitation and reflux conditions at a temperature of 70 to 80 DEG C; stabilizing the medium and proceeding with the addition of bidistilled water in a water / alkoxide molar ratio of 1-2/0.100-0.150, continuing with reflux until gelation; subjecting the gel to a treatment of aging , for a time from 1 to 24 hours for complete formation of the titania; drying the titania nanostructured at a temperature of 50 to 80 DEG C for about 1 to 24 hours, and subjecting the dried titania to a calcination step at a temperature of 200 to 600 DEG C, during a time from 1 to 12 hours. The dimension of the crystal size of the titania nanostructures of semiconducting material depends on TSG-IMP particular handling or assembly of the sol gel method variables such as the types of metal alkoxides of titanium used, the characteristics of the solvents, relationship alkoxide / water, and the medium in which the hydrolysis takes place, which can be acidic or basic. |
