发明名称 MANUFACTURING METHOD OF SILICON OXIDE, AND ANODE MATERIAL FOR SECONDARY BATTERY, INCLUDING SILICON OXIDE MANUFACTURED BY THE SAME
摘要 Disclosed is a method for manufacturing silicon oxide capable of being used as an anode material for a secondary battery. The present invention includes a first step of forming a porous material by mixing silicon chloride and glycol which is divalent alcohol and a second step of forming silicon oxide by thermally treating the porous material in an inert gas atmosphere. The silicon oxide is represented by general formula SiOx, wherein oxygen content (x) is 0 <x <2.
申请公布号 KR20130139554(A) 申请公布日期 2013.12.23
申请号 KR20120063096 申请日期 2012.06.13
申请人 YEIL ELECTRONICS CO., LTD. 发明人 KANG, YUN KYU
分类号 C01B33/113;C01B33/08;H01M4/48 主分类号 C01B33/113
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