| 摘要 |
<p>A thin film transistor (20) includes: a gate electrode (22g) formed above a substrate (21); an oxide semiconductor layer (24) formed above the substrate (21); a gate insulating film (23) formed between the gate electrode (22g) and the oxide semiconductor layer (24); a plurality of electrodes (a source electrode (25s), a drain electrode (25d)) connected to the oxide semiconductor layer (24); and a protective film (26) covering the electrodes. Each of the electrodes includes either a laminated film in which a Mo film, a Cu film, and a CuMn alloy film are laminated in this order bottom up, or a laminated film in which a CuMn alloy film, a Cu film, and a CuMn alloy film are laminated in this order bottom up.</p> |
