PLASMA PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus achieving high etching performance and mass production stability without causing abnormal discharge even in high electromagnetic field of an inductively coupled plasma processing apparatus and the like.SOLUTION: A plasma processing apparatus includes: a processing chamber 1; a planar dielectric window 2a; an induction coil 18; a flat-plate electrode 19; a high frequency power source 16; a gas supply means 10; and a sample stage 4 on which a sample 3 is mounted. A process gas supply plate 11a is disposed on the dielectric window in an inner side of the processing chamber, and a recessed part 21a is formed in the flat-plate electrode 19 on a side opposite the induction coil at a position corresponding to a gas supply position 15a of the process gas supply plate 11a.