| 摘要 |
A non-volatile memory device is provided, which includes a first block for storing a first data group including a test data, a second block for storing a second data group including a complementary data to the first data group, a differential sense amplifier for generating an output value based on a difference between two input signals, a diagnostic circuit for performing a failure diagnosis using a value from the differential sense amplifier, and a control circuit which performs control such that a signal based on the test data and the complementary data is set to the input signal of the differential sense amplifier and the diagnostic circuit executes a failure diagnosis of the differential sense amplifier. The non-volatile memory device performs a failure diagnosis with high reliability capable of distinguishing between a failure of sense amplifier and a failure of a memory cell. |
