| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a silicon carbide capable of suppressing damage to an inner surface of a deposition chamber and highly efficiently removing a deposit adhering to the inner surface of the deposition chamber in-site in a short time without reducing productivity, and a silicon carbide deposition device.SOLUTION: A method for removing a silicon carbide comprises the steps of: sequentially repeating first removal processing for heating an inner surface of a deposition chamber to a temperature of 350°C or higher and removing a deposit composed of a silicon carbide by supplying a plasmatized fluorine-containing gas into the heated deposition chamber and second removal processing for removing the deposit by blowing an inactive gas to the inner surface of the deposition chamber after the first removal processing; and analyzing concentration of a prescribed gas included in the exhaust gas discharged from the deposition chamber. The method terminates the deposit removing step when the concentration of the prescribed gas becomes a prescribed threshold value or below. |
