| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve further microfabrication of the semiconductor device.SOLUTION: A semiconductor device comprises: a first impurity diffusion region 16 provided on a bottom end 28A of each pillar 28; a second impurity diffusion region 38 provided on an upper end 28C of each pillar 28; first gate insulation films 22 provided on surfaces, in first lateral faces 28a of the pillars 28 which are arranged opposite to each other, located between the first impurity diffusion region 16 and the second impurity diffusion region 38; second gate insulation films 32 provided on second lateral faces 28b located on upper parts of the pillars 28; a first gate electrode 24 which contacts the first gate insulation films 22 arranged opposite to each other and which is arranged between the neighboring pillars 28; and a second gate electrode 34 which contacts the second gate insulation films 32 arranged opposite to each other and which is arranged between the neighboring pillars 28. |
