发明名称 METHOD FOR FABRICATING ELECTRODE STRUCTURE HAVING NANOGAP LENGTH, ELECTRODE STRUCTURE HAVING NANOGAP LENGTH OBTAINED THEREBY, AND NANODEVICE
摘要 A substrate (1) on which metal layers (2A, 2B) are disposed with a gap therebetween is immersed in an electroless plating solution in which a reducing agent and surfactant are mixed into an electrolyte containing metal ions. The metal ions are reduced by the reducing agent, and while the metal is deposited on the metal layers (2A, 2B), the surfactant adheres to the surface of the metal, and electrodes (4A, 4B), wherein the gap length is controlled to a nanometer size, are formed. Thus, a method for fabricating an electrode structure having a nanogap gap length such that the variations in gap length can be controlled, an electrode structure having a nanogap length in which variations in gap length are suppressed using this fabrication method, and a nanodevice provided with the same are provided.
申请公布号 KR20130135336(A) 申请公布日期 2013.12.10
申请号 KR20137026296 申请日期 2012.02.28
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 MAJIMA YUTAKA;TERANISHI TOSHIHARU;MURAKI TARO;TANAKA DAISUKE
分类号 H01L21/288;B82B1/00;B82B3/00;H01L21/336 主分类号 H01L21/288
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