| 摘要 |
A method of fabricating a thin film transistor array substrate is provided to obtain a flat active pattern by removing a grain boundary of a silicon layer. A silicon layer(226) including a grain(G) and a grain boundary(D) is formed on an insulating substrate. A mask(250) including one or more slit patterns of the same interval as the grain size is formed on the substrate including the silicon layer. The silicon layer is etched using the mask to form an active pattern. The mask is etched to expose the grain boundary of the active pattern on the remaining mask surface. The grain boundary of the active pattern is etched and planarized. The remaining mask is removed. The silicon layer is formed by a solid-phase crystallization process. The silicon layer is a polycrystalline silicon layer. |
