发明名称 |
CIRCUITRY INCLUDING RESISTIVE RANDOM ACCESS MEMORY STORAGE CELLS AND METHODS FOR FORMING SAME |
摘要 |
A method of forming a circuitry includes providing a substrate comprising a plurality of die. Each die includes a plurality of resistive random access memory (RRAM) storage cells. The method further includes concurrently initializing substantially all of the RRAM storage cells on the same wafer. Initializing can include applying a voltage potential across the RRAM storage cells. |
申请公布号 |
US2013322152(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213484326 |
申请日期 |
2012.05.31 |
申请人 |
KUHN PETER J.;ZHOU FENG;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
KUHN PETER J.;ZHOU FENG |
分类号 |
G11C11/00;H01L21/66 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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