METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP-III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.