SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To enable use of an aluminum material for an electrode surface of a semiconductor element; require no useless increase in thickness of an aluminum layer; and firmly bond a copper wire to an electrode of a semiconductor element regardless of a wire diameter thereby to achieve high heat resistance.SOLUTION: A power semiconductor element 10 comprises: a substrate formed by using a silicon carbide (SiC); a titanium layer 20 and an aluminum layer 21 which are formed on the silicon carbide substrate as an electrode 15; a copper-aluminum compound (such as AlCuand AlCu) 23 which is formed between a copper wire 16 and the titanium layer 20 by performing ball bonding or wedge bonding with the copper wire 16 on the aluminum layer 21 of the electrode 15 with applying ultrasonic vibration.