发明名称 |
SEMICONDUCTOR DEVICE CONTACT STRUCTURES |
摘要 |
Semiconductor contact structures extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings. |
申请公布号 |
US2013320541(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313961908 |
申请日期 |
2013.08.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG SHIH-CHIEH;CHANG CHIH-CHUNG;CHEN KEI-WEI;WANG YING-LANG |
分类号 |
H01L23/532 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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