发明名称 METHOD AND SYSTEM FOR WAFER LEVEL SINGULATION
摘要 A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.
申请公布号 KR20130130834(A) 申请公布日期 2013.12.02
申请号 KR20137024514 申请日期 2012.02.17
申请人 APPLIED MATERIALS, INC. 发明人 SCHUEGRAF KLAUS;RAMASWAMI SESHADRI;RICE MICHAEL R.;SALEK MOHSEN S.;BJORKMAN CLAES H.
分类号 H01L21/78;H01L21/301 主分类号 H01L21/78
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