| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a tape carrier for a semiconductor device, which enables an opening to be coated by copper plating at a current density higher than a conventional density to improve the productivity of the tape carrier and enhance the connection reliability. <P>SOLUTION: The manufacturing method has steps of: forming an opening 23 penetrating an insulating film 21 in the direction of thickness; pasting a copper foil 24 on the upper surface of the insulating film 21 to expose the copper foil 24 from the lower surface of the insulating film 21 through the opening 23; placing a mask 26 on the upper surface of the copper foil 24 and then plating the portion exposed through the opening 23 on the lower surface of the copper foil 24 by copper plating 27 to reduce the depth of the opening 23; photoetching the copper foil 24 stripped of the mask 26 from the upper surface thereof after the plating filling step, to form a conductive pattern 28; and forming a surface plating process layer 29 on the conductive pattern 28. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
