| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a trench gate power semiconductor device that is higher in reliability than a conventional trench gate power semiconductor device and has high ESD resistance. <P>SOLUTION: The trench gate power semiconductor device 100 includes a plurality of trenches 120, 122 arrayed in stripes at a predetermined first pitch (a) in plan view, and outermost trenches 122 between the plurality of trenches 120, 122 include a plurality of auxiliary trenches 124, protruding outward from the trenches 122 in a second direction (x direction) perpendicular to a first direction (y direction) where the trenches 122 extend, formed at a prescribed second pitch (b) set to 0.5 to 1.5 times as large as the first pitch (a) in the first direction (y direction). <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
