发明名称 SILICON ON INSULATOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR WITH AN ISOLATION FORMED AT LOW TEMPERATURE
摘要 A silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) with an isolation formed at a low temperature and methods for constructing the same. An example method includes infusing an insulation material at a low temperature to form a silicon-based insulator between the active regions.
申请公布号 US2013307078(A1) 申请公布日期 2013.11.21
申请号 US201313949606 申请日期 2013.07.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G.
分类号 H01L29/06 主分类号 H01L29/06
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