发明名称 |
SILICON ON INSULATOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR WITH AN ISOLATION FORMED AT LOW TEMPERATURE |
摘要 |
A silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) with an isolation formed at a low temperature and methods for constructing the same. An example method includes infusing an insulation material at a low temperature to form a silicon-based insulator between the active regions.
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申请公布号 |
US2013307078(A1) |
申请公布日期 |
2013.11.21 |
申请号 |
US201313949606 |
申请日期 |
2013.07.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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