发明名称 |
NANO-INTERCONNECTS FOR ATOMIC AND MOLECULAR SCALE CIRCUITS |
摘要 |
A method for forming interconnects in a substrate, the substrate comprising a semiconductor layer on an oxide layer forming a silicon-on-oxide substrate, the method comprising forming a plurality of holes into the substrate to the semiconductor layer, and metalizing the plurality of holes to form the interconnects.
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申请公布号 |
EP2186128(B1) |
申请公布日期 |
2013.11.20 |
申请号 |
EP20070794259 |
申请日期 |
2007.08.10 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (A*STAR) |
发明人 |
THET, NAING TUN;JOACHIM, CHRISTIAN;CHANDRASEKHAR, N. |
分类号 |
H01L21/768;B82B3/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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