发明名称 NANO-INTERCONNECTS FOR ATOMIC AND MOLECULAR SCALE CIRCUITS
摘要 A method for forming interconnects in a substrate, the substrate comprising a semiconductor layer on an oxide layer forming a silicon-on-oxide substrate, the method comprising forming a plurality of holes into the substrate to the semiconductor layer, and metalizing the plurality of holes to form the interconnects.
申请公布号 EP2186128(B1) 申请公布日期 2013.11.20
申请号 EP20070794259 申请日期 2007.08.10
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (A*STAR) 发明人 THET, NAING TUN;JOACHIM, CHRISTIAN;CHANDRASEKHAR, N.
分类号 H01L21/768;B82B3/00 主分类号 H01L21/768
代理机构 代理人
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