SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device with a vertical channel transistor and a manufacturing method thereof are provided. The manufacturing method comprises the steps of: forming a trench which defines an active region by patterning a substrate; forming a sacrificial pattern on the lower region of the trench; forming a spacer on the upper sidewall of the trench; recessing the upper surface of the sacrificial pattern; forming a window which exposes the sidewall of the active region between the spacer and the sacrificial pattern; forming an impurity region on the active region by doping the sidewall of the trench through the window; and forming a wire electrically connected to the impurity region within the trench.