Method for boron doping silicon wafers in zone oven, involves diffusing boron from borosilicate glass layer in silicon wafer, cooling diffusion chamber at defined removal temperature, and removing silicon wafer out of chamber

摘要

The method involves setting defined load temperature to load diffusion chamber with silicon wafers. The diffusion chamber is heated until defined target temperature is reached. The boron-containing reactive gas is introduced into diffusion chamber to form layer of borosilicate glass on surface of silicon wafer. The boron is diffused from borosilicate glass layer in silicon wafer. The diffusion chamber is cooled until defined removal temperature is reached. The silicon wafer is removed out of diffusion chamber.