发明名称 |
Semiconductor device with transistor local interconnects |
摘要 |
A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer. |
申请公布号 |
US8581348(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201113324699 |
申请日期 |
2011.12.13 |
申请人 |
RASHED MAHBUB;SOSS STEVEN;KYE JONGWOOK;LIN IRENE Y.;GULLETTE JAMES BENJAMIN;NGUYEN CHINH;KIM JEFF;TARABBIA MARC;MA YUANSHENG;DENG YUNFEI;AUGUR ROD;RHEE SEUNG-HYUN;JOHNSON SCOTT;KENGERI SUBRAMANI;VENKATESAN SURESH;GLOBALFOUNDRIES, INC. |
发明人 |
RASHED MAHBUB;SOSS STEVEN;KYE JONGWOOK;LIN IRENE Y.;GULLETTE JAMES BENJAMIN;NGUYEN CHINH;KIM JEFF;TARABBIA MARC;MA YUANSHENG;DENG YUNFEI;AUGUR ROD;RHEE SEUNG-HYUN;JOHNSON SCOTT;KENGERI SUBRAMANI;VENKATESAN SURESH |
分类号 |
H01L27/088;H01L21/02;H01L21/70 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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