发明名称 Semiconductor device with transistor local interconnects
摘要 A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer.
申请公布号 US8581348(B2) 申请公布日期 2013.11.12
申请号 US201113324699 申请日期 2011.12.13
申请人 RASHED MAHBUB;SOSS STEVEN;KYE JONGWOOK;LIN IRENE Y.;GULLETTE JAMES BENJAMIN;NGUYEN CHINH;KIM JEFF;TARABBIA MARC;MA YUANSHENG;DENG YUNFEI;AUGUR ROD;RHEE SEUNG-HYUN;JOHNSON SCOTT;KENGERI SUBRAMANI;VENKATESAN SURESH;GLOBALFOUNDRIES, INC. 发明人 RASHED MAHBUB;SOSS STEVEN;KYE JONGWOOK;LIN IRENE Y.;GULLETTE JAMES BENJAMIN;NGUYEN CHINH;KIM JEFF;TARABBIA MARC;MA YUANSHENG;DENG YUNFEI;AUGUR ROD;RHEE SEUNG-HYUN;JOHNSON SCOTT;KENGERI SUBRAMANI;VENKATESAN SURESH
分类号 H01L27/088;H01L21/02;H01L21/70 主分类号 H01L27/088
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