发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be supplied with sufficient power while suppressing an increase in manufacturing cost.SOLUTION: The semiconductor device includes: a semiconductor substrate SS1; a multilayer wiring layer ML1 provided on the semiconductor substrate SS1; an Al wiring layer PM1 provided on the multilayer wiring layer ML1 and having a pad part PD1; and a rewiring layer EG1 provided on the Al wiring layer PM1 and connected to the Al wiring layer PM1. The rewiring layer EG1 is constituted of a metal material having an electrical resistivity lower than that of Al and is not formed on the pad part PD1. |
申请公布号 |
JP2013229455(A) |
申请公布日期 |
2013.11.07 |
申请号 |
JP20120100601 |
申请日期 |
2012.04.26 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
TAMIDA HIROYASU;YAMAMOTO HIROSHI |
分类号 |
H01L23/522;H01L21/3205;H01L21/60;H01L21/768;H01L21/822;H01L27/04 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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