发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can be supplied with sufficient power while suppressing an increase in manufacturing cost.SOLUTION: The semiconductor device includes: a semiconductor substrate SS1; a multilayer wiring layer ML1 provided on the semiconductor substrate SS1; an Al wiring layer PM1 provided on the multilayer wiring layer ML1 and having a pad part PD1; and a rewiring layer EG1 provided on the Al wiring layer PM1 and connected to the Al wiring layer PM1. The rewiring layer EG1 is constituted of a metal material having an electrical resistivity lower than that of Al and is not formed on the pad part PD1.
申请公布号 JP2013229455(A) 申请公布日期 2013.11.07
申请号 JP20120100601 申请日期 2012.04.26
申请人 RENESAS ELECTRONICS CORP 发明人 TAMIDA HIROYASU;YAMAMOTO HIROSHI
分类号 H01L23/522;H01L21/3205;H01L21/60;H01L21/768;H01L21/822;H01L27/04 主分类号 H01L23/522
代理机构 代理人
主权项
地址