发明名称 READING DATA FROM MULTI-LEVEL CELL MEMORY
摘要 A method at a data storage device includes determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory. A second hard bit of a second logical page is sensed. The second hard bit corresponds to the particular cell. The first hard bit is used as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page.
申请公布号 US2013294157(A1) 申请公布日期 2013.11.07
申请号 US201213465308 申请日期 2012.05.07
申请人 SHARON ERAN;ALROD IDAN;SANDISK TECHNOLOGIES INC. 发明人 SHARON ERAN;ALROD IDAN
分类号 G11C16/26 主分类号 G11C16/26
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