发明名称 |
STRAINED SILICON STRUCTURE |
摘要 |
A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
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申请公布号 |
US2013292775(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313936214 |
申请日期 |
2013.07.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HWANG GUANG-YAW;CHOU LING-CHUN;WANG I-CHANG;HUANG SHIN-CHUAN;LIAO JIUNN-HSIUNG;CHEN SHIN-CHI;LIN PAU-CHUNG;YEH CHIU-HSIEN;CHIEN CHIN-CHENG;CHEN CHIEH-TE |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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