| 发明名称 |
SOI WAFER MANUFACTURING METHOD |
| 摘要 |
<p>A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO 2 as 1. 5, refractive index n2 of Si as 3.5, and optical thickness t op of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as t OP =n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1»<t OP <2», and so as to make (t1×n1) / (t2×n2) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×10 9 /cm 3 . This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.</p> |
| 申请公布号 |
EP1806769(B1) |
申请公布日期 |
2013.11.06 |
| 申请号 |
EP20050778598 |
申请日期 |
2005.09.09 |
| 申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
AGA, HIROJI;KOBAYASHI, NORIHIRO;IMAI, MASAYUKI;ENOMOTO, TATSUO;TAKENO, HIROSHI |
| 分类号 |
H01L21/762;H01L21/322 |
主分类号 |
H01L21/762 |
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