发明名称 |
Method for manufacturing solid-state imaging device |
摘要 |
A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator. The method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.
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申请公布号 |
US8574941(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113153941 |
申请日期 |
2011.06.06 |
申请人 |
HIYAMA SUSUMU;HIRANO TOMOYUKI;SONY CORPORATION |
发明人 |
HIYAMA SUSUMU;HIRANO TOMOYUKI |
分类号 |
H01L31/103;H01L27/146;H01L31/10;H04N5/335;H04N5/361;H04N5/369;H04N5/374 |
主分类号 |
H01L31/103 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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