发明名称 Method for manufacturing solid-state imaging device
摘要 A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator. The method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.
申请公布号 US8574941(B2) 申请公布日期 2013.11.05
申请号 US201113153941 申请日期 2011.06.06
申请人 HIYAMA SUSUMU;HIRANO TOMOYUKI;SONY CORPORATION 发明人 HIYAMA SUSUMU;HIRANO TOMOYUKI
分类号 H01L31/103;H01L27/146;H01L31/10;H04N5/335;H04N5/361;H04N5/369;H04N5/374 主分类号 H01L31/103
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