发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device according to an embodiment herein includes a memory cell array. The memory cell array includes memory cells each provided between a first line and a second line and each including a variable resistor. A control circuit applies through the first and second lines a voltage necessary for a forming operation of the memory cell. A current limiting circuit limits a value of a current flowing across the memory cell during the forming operation to a certain limit value. The control circuit repeats an operation of applying the voltage by setting the limit value to a certain value and an operation of changing the limit value from the certain value, until forming of the memory cell is achieved.
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申请公布号 |
US8576606(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201113052214 |
申请日期 |
2011.03.21 |
申请人 |
KUNITAKE TETSUJI;SHIGEOKA TAKASHI;TSUKAMOTO TAKAYUKI;WAKAI HIRONORI;KATO HISASHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUNITAKE TETSUJI;SHIGEOKA TAKASHI;TSUKAMOTO TAKAYUKI;WAKAI HIRONORI;KATO HISASHI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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