发明名称 Method and surface morphology of non-polar gallium nitride containing substrates
摘要 An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about -0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.
申请公布号 US8575728(B1) 申请公布日期 2013.11.05
申请号 US201213548635 申请日期 2012.07.13
申请人 RARING JAMES W.;POBLENZ CHRISTIANE;SORAA, INC. 发明人 RARING JAMES W.;POBLENZ CHRISTIANE
分类号 H01L29/04 主分类号 H01L29/04
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