发明名称 SEMICONDUCTOR MEMORY APPARATUS
摘要 A semiconductor device comprises: a control unit for generating a first pumping enable signal and a second pumping enable signal which are alternatively enabled in response to an active signal; a first pumping voltage generating unit for generating first pumping voltage by performing a pumping operation during an enable period of the first pumping enable signal; and a second pumping voltage generating unit for generating second pumping voltage by performing a pumping operation during an enable period of the second pumping enable signal. [Reference numerals] (100) Control unit;(200) First pumping voltage generating unit;(300) Second pumping voltage generating unit;(400) Word line driver
申请公布号 KR20130120188(A) 申请公布日期 2013.11.04
申请号 KR20120043253 申请日期 2012.04.25
申请人 SK HYNIX INC. 发明人 KIM, JONG HWAN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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