ION DOSE MONITORING METHOD FOR PLASMA ION IMPLANTATION PROCESS

摘要

PURPOSE: A method for monitoring an ion dose in a plasma ion implantation process is provided to accurately find a time domain with a displacement current by using a distribution comparing algorithm. CONSTITUTION: An external signal noise is removed from a sampled current signal(1300). A displacement current is removed from the sampled current signal(1400). A secondary electron current is removed from the sampled current signal(1500). An ion current is obtained from the sampled current signal(1600). An ion dose is obtained by integrating the ion current with regard to pulse time(1700). [Reference numerals] (1100) Step of obtaining a signal; (1200) Step of sampling the signal; (1300) Step of removing an external signal noise; (1400) Step of removing a displacement current; (1500) Step of removing a secondary current; (1600) Step of obtaining an ion current; (1700) Step of obtaining an ion dose; (AA) Start; (BB) End;