| 摘要 |
<p>A method of manufacturing bonded wafer according to the present invention is characterized in comprising a process, prior to a bonding process, for applying plasma activation processing to a bonding face of a bonding wafer and/or a base wafer, and characterized in applying, in the plasma activation processing process, the plasma activation processing while placing the back face of the bonding wafer and/or the base wafer in point-contact or line-contact with the stage. Thereby, the method of manufacturing bonded wafer can inhibit extraneous matter such as particles from increasing on the back face of a wafer when applying plasma activation processing thereto, and can prevent the extraneous matter from being reattached to the bonding face of the wafer, especially when washing the wafer with a batch-type washing machine after the plasma activation processing has been applied thereto.</p> |
