| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of reducing a difference in linear expansion coefficient between a heat sink and a semiconductor device.SOLUTION: The semiconductor device 1 includes a first heat sink 11 and an IGBT 13 and a reflux diode 14 formed above the first heat sink 11. The first heat sink 11 is composed of alloy whose major component is AlSiC, Cu-CuMo-Cu and Mo, or Fe or alloy whose major component is Fe, or W or alloy whose major component is W. The IGBT 13 and the reflux diode 14 include Si. |
