PLASMA NITRIDING TREATMENT METHOD AND PROCESS OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a plasma nitriding treatment method capable of directly nitriding silicon using plasma to form a high quality thin silicon nitride film.SOLUTION: A nitriding treatment is performed at a temperature of 500°C or over, preferably between 600 to 800°C when a nitriding treatment is performed by an action of microwave excitation high density plasma formed by introducing a micro wave into a processing chamber with a planar antenna having a plurality of slots for silicon of a surface of an object to be treated in the processing chamber of the plasma processing apparatus.