发明名称 |
Combination, Method, and Composition for Chemical Mechanical Planarization of a Tungsten-Containing Substrate |
摘要 |
A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.
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申请公布号 |
US2013288479(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313930273 |
申请日期 |
2013.06.28 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
MCCONNELL RACHEL DIANNE;HURST ANN MARIE |
分类号 |
H01L21/306;C09G1/02 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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