发明名称 |
METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a resist pattern having an eaves-like portion can be formed with high accuracy and unintentional residue of the resist can be suppressed.SOLUTION: The method for forming a resist pattern includes: a first step of disposing a first mask 30 having a predetermined opening on a positive resist film 20 and exposing the resist film 20 to a depth not reaching the lower face of the resist film; a second step of heat treating the resist film 20 to insolubilize an exposed region 21; a third step of disposing a second mask 40 on the resist film 20 to cover a region smaller than the insolubilized region 23 and exposing the resist film 20 to a depth reaching the lower face of the resist film; and a fourth step of removing a region other than the region 23 insolubilized in the second step and a region 22 not exposed in the third step. |
申请公布号 |
JP2013218158(A) |
申请公布日期 |
2013.10.24 |
申请号 |
JP20120089353 |
申请日期 |
2012.04.10 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
SUMITOMO SHUSUKE |
分类号 |
G03F7/26;H01L21/027;H01L21/28;H01L21/3205;H01L21/768 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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