发明名称 |
Image Sensor Isolation Region and Method of Forming the Same |
摘要 |
Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
|
申请公布号 |
US2013280849(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313900106 |
申请日期 |
2013.05.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
JANGJIAN SHIU-KO;HONG MIN HAO;CHEN KEI-WEI;WU SZU-AN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|