发明名称 |
MEMORY SYSTEM AND OPERATING METHOD OF CONTROLLER |
摘要 |
PURPOSE: A memory system and an operating method of a controller reduce the size of the controller by controlling a NAND flash memory and a phase change memory using the same NAND interface. CONSTITUTION: A controller (1300) controls a NAND flash memory (1100) and a variable resistance memory (1200). The controller controls a program of the NAND flash memory and a program of the variable resistance memory according to the same command sequence. The NAND flash memory and the variable resistance memory each exchange multiple I/O signals, a chip enable signal, and a data strobe signal with the controller. |
申请公布号 |
KR20130114354(A) |
申请公布日期 |
2013.10.18 |
申请号 |
KR20120036626 |
申请日期 |
2012.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, CHUL HO;YUN, EUN JIN;KIM, BO GEUN |
分类号 |
G11C7/10;G11C7/22;G11C13/00;G11C16/06 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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