SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A buffer layer is provided on a substrate, is made of silicon carbide containing an impurity, and has a thickness larger than 1 μm and smaller than 7 μm. A drift layer is provided on the buffer layer and is made of silicon carbide having an impurity concentration smaller than that of the buffer layer. In this way, there can be provided a silicon carbide semiconductor device having the drift layer having a desired impurity concentration and a high crystallinity.