发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a photoresist composition that has excellent lithographic performance with MEEF, DOF, LWR or the like as indices, in addition to excellent basic properties such as sensitivity.SOLUTION: A photosensitive composition contains a polymer component composed of a structural unit represented by formula (1) and a structural unit represented by formula (2), an acid generator, and a triphenylsulfonium compound.
申请公布号 JP2013213951(A) 申请公布日期 2013.10.17
申请号 JP20120084391 申请日期 2012.04.02
申请人 JSR CORP 发明人 KASAHARA KAZUKI;IKEDA NORIHIKO
分类号 G03F7/039;C08F220/10;C08F224/00;G03F7/004;H01L21/027 主分类号 G03F7/039
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