Flash memory device and wordline voltage generating method thereof

摘要

A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.