发明名称 |
PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A ferroelectric PZT thin film maintains dielectric performance similar to a conventional ferroelectric PZT thin film and has improved lifetime reliability. CONSTITUTION: A ferroelectric PZT thin film is formed on the lower electrode (11) of a substrate (10) which has the lower electrode on which a crystal plane is aligned in an axial direction. The ferroelectric thin film has an orientation control layer (12) which is formed on the lower electrode and has a crystal orientation-controlled layer with a thickness of 45-270 nm; a film thickness-controlling layer (13) which is formed on the crystal orientation-controlled layer and has the same crystal orientation as the crystal orientation of the orientation-controlled layer; and an interface (14) between the orientation-controlled layer and a film thickness-controlling layer. [Reference numerals] (10) Substrate; (11) Lower electrode; (12) Orientation control layer; (13) Film thickness-controlling layer; (14) Interface</p> |
申请公布号 |
KR20130111305(A) |
申请公布日期 |
2013.10.10 |
申请号 |
KR20130028154 |
申请日期 |
2013.03.15 |
申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
NOGUCHI TAKASHI;DOI TOSHIHIRO;SAKURAI HIDEAKI;WATANABE TOSHIAKI;SOYAMA NOBUYUKI |
分类号 |
H01B3/10;C04B35/49;H01B17/62;H01G4/10 |
主分类号 |
H01B3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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