| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature sensor in which, even when a thermistor material layer of TiAlN is formed on an electrode, generation of a crack in a step of the electrode can be suppressed, and a manufacturing method thereof.SOLUTION: A temperature sensor comprises an insulative substrate 2, a pair of pattern electrodes formed by including a pair of counter electrode parts 3a which are confronted with each other on the insulative substrate, and a thin film thermistor section 4 formed by covering the pair of counter electrode parts on the insulative substrate. The thin film thermistor section includes a first thermistor layer 4A which has film thickness equal to or more than that of the counter electrode parts and is formed from a thermistor material of TiAlN, and a second thermistor layer 4B which is laminated on the first thermistor layer and formed from a thermistor material of TiAlN of which the film density is higher than that of the first thermistor layer. |
